The following are conditions for acceptance of D0 detectors:
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Conditions for detector acceptance as A grade |
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Stereo detectors and F disks |
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|
Parameter |
Value for good devices |
Nominal |
Testing conditions |
|
Leakage current |
<10 microamps total |
As low as possible |
Vd + 20V |
|
P side cap failures |
<2%/side |
breakdown>180V |
100V, I <2na * |
|
N side cap failures |
<2%/side |
breakdown>180V |
50V, I <2na * |
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R Bias |
1 Mohm<Rb<10 Mohm |
3 Mohm |
Single probe, detector biased |
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R Bias uniformity |
+/- 25% |
10% |
Single probe, detector biased |
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R interstrip |
>100 Mohm |
>1 Gohm |
multiple probe |
|
C coupling |
>15pF/cm |
20 pf/cm |
Cc test |
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Channels outside+/-5% of average fail |
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V depl |
20<Vd<60 |
35V |
CV test of detector+ test structure |
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Vbd |
>100V |
As High as possible |
Ibd = 15 microamp |
|
90 Degree detectors |
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|
Parameter |
Value for good devices |
Nominal |
Testing conditions |
|
Leakage current |
<10 microamps total |
As low as possible |
Vd + 20V |
|
P side cap failures |
<2% |
breakdown>180V |
100V, I <2na * |
|
N side cap failures |
<4% |
breakdown>180V |
50V, I <2na * |
|
R Bias |
1 Mohm<Rb<10Mohm |
2.5 Mohm |
Single probe, detector biased |
|
R Bias uniformity |
+/- 25% |
10% |
Single probe, detector biased |
|
R interstrip |
>100 Mohm |
>1 Gohm |
multiple probe |
|
C coupling |
>15pF/cm |
20 pf/cm |
Cc test |
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Channels outside+/-5% of average fail |
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V depl |
20<Vd<60 |
35V |
CV test of detector+ test structure |
|
Vbd |
>100V |
As High as possible |
Ibd = 15 microamp |